Photoelectric conversion device

ABSTRACT

A plurality of first electrodes are sequentially arranged on a substrate and covered with a non-single-crystal semiconductor laminate member. On the semiconductor laminate member are formed second electrodes respectively corresponding to the first electrodes. Each first electrode and each second electrode and the region of the semiconductor laminate member sandwiched therebetween constitute one semiconductor photoelectric transducer. The transducer is connected to another transducer adjacent thereto so that the second electrode of the latter is connected to the first electrode of the former through a contact portion extending thereto from the second electrode of the latter into a contact groove cut in the semiconductor laminate member. In this case, the contact groove and the contact portion are not exposed in the side walls of the semiconductor laminate member. The side walls of the first and/or second electrode are retained inside the side walls of the substrate. 
     The first electrodes, the second electrodes and the contact grooves are defined by a laser beam.

This is a Divisional application of Ser. No. 08/013,209, filed Feb. 1,1993, now U.S. Pat. No. 5,332,450, which itself was a continuation ofSer. No. 07/839,067, filed Feb. 20, 1992, abandoned, which itself was acontinuation of Ser. No. 06/800,666, filed Nov. 22, 1985, abandoned,which is a divisional of Ser. No. 06/630,063, filed Jul. 12, 1984, nowU.S. Pat. No. 4,594,471.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to improvement in a photoelectricconversion device which has a plurality of sequentially series-connectedsemiconductor transducers and its manufacturing method.

2. Description of the Prior Art

As a photoelectric conversion device provided with a plurality ofsequentially series-connected semiconductor transducers U₁, U₂, . . . ,there has been proposed a structure which comprises (a) a substratehaving an insulating surface, (b) a plurality of first electrodes E₁,E₂, . . . formed side by side on the substrate, (c) a non-single-crystalsemiconductor laminate member formed on the substrate to cover the firstelectrodes E₁, E₂, . . . and (d) a plurality of second electrodes F₁,F₂, . . . formed side by side on the non-single-crystal semiconductorlayer in opposing relation to the first electrodes E₁, E₂, . . . ,respectively, and in which the semiconductor transducer U_(i) (wherei=1, 2, . . . ) is made up of the first electrode E_(i), the secondelectrode F_(i) and that region Q_(i) of the non-single-crystalsemiconductor laminate member which is sandwiched between the first andsecond electrodes E_(i) and F_(i), and the second electrode F_(i) isconnected to the first electrode E_(i+1) through a contact portionK_(i)(i+1).

In such a conventional photolectric conversion device, however, thecontact portion K_(i)(i+1), which interconnects the second electrodeF_(i) of the semiconductor transducer U_(i) and the first electrodeE_(i+1) of the semiconductor transducer U_(i+1), is comprised of, forexample, an extension of the first electrode E_(i+1) which is formed onthe substrate and extends therefrom on the side wall along the directionof arrangement of the semiconductor transducers U₁, U₂, . . . and anextension of the second electrode F_(i) which is formed on thenon-single-crystal semiconductor laminate member and extends therefromon the side wall along the direction of arrangement of the semiconductortransducers U₁, U₂, . . . and onto the substrate and thence to theextension of the first electrode E₁₊₁. Therefore, the contact portionK_(i)(i+1) is complex in construction and there is a certain limit todecreasing the area of the substrate consumed by the contact portions.Accordingly, it is difficult to fabricate the conventional photoelectricconversion device with a simple construction and with a high density.

Further, in the conventional photoelectric conversion device having theabove construction, when forming the second electrode F_(i) which hasthe extension forming the contact portion K_(i)(i+1), together with theextension of the first electrode E_(i+1), there is a fear of shortingthe first and second electrodes E_(i) and F_(i) of the semiconductortransducer U_(i) by the material forming the second electrode F_(i). Onaccount of this, it is difficult to obtain a photoelectric conversiondevice with the desired high photoelectric conversion efficiency.

Moreover, since it is feared that a significant leakage current flowsbetween the first and second electrodes E_(i) and F_(i) of thesemiconductor transducer U_(i) through the side wall of the region Q_(i)of the non-single-crystal semiconductor laminate member extending alongthe direction of arrangement of the semiconductor transducers U₁, U₂, .. . , there is the likehood that the conventional photoelectricconversion device cannot be operated with the required highphotoelectric conversion efficiency.

Various methods have been proposed for the manufacture of the abovesaidphotoelectric conversion device.

However, the prior art methods do not allow ease of manufacture of aclosely-packed photoelectric conversion device of low leakage currentand which achieves the intended high photoelectric conversionefficiency.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide a novelphotoelectric conversion device which can easily be manufactured withoutincurring the possibility of the abovesaid defects, and a method for themanufacture of such a photoelectric conversion device.

The photoelectric conversion device of the present invention comprises aplurality of series-connected semiconductor transducers U₁, U₂, . . . ,as is the case with the abovementioned conventional photoelectricconversion device. The photoelectric conversion device of the presentinvention is comprised of (a) a substrate having an insulating surface,(b) a plurality of first electrodes E₁, E₂, . . . formed side by side onthe substrate, (c) a non-single-crystal semiconductor laminate memberformed on the substrate to cover the first electrodes E₁, E₂, . . . and(d) a plurality of second electrodes F₁, F₂, . . . formed on thenon-single-crystal semiconductor laminate member in opposing relation tothe first electrodes E₁, E₂, . . . , respectively. Accordingly, thesemiconductor transducer U_(i) (where i=1, 2, . . . ) is constituted bythe first electrode E_(i), the second electrode F_(i) and a region Q_(i)of the non-single-crystal semiconductor laminate member which issandwiched between the first and second electrodes E_(i) and F_(i), andthe second electrode F_(i) is connected to the first electrode E_(i+1)through a contact portion K_(i)(i+1).

In the photoelectric conversion device of the present invention whichhas such a structure as described above, the plurality of firstelectrodes E₁, E₂, . . . are respectively isolated from adjacent ones bya plurality of first isolation grooves G₁₂, G₂₃, . . . sequentiallyarranged in the direction of arrangement of the first electrodes.Further, the non-single-crystal semiconductor laminate member extendsinto the plurality of first isolation grooves G₁₂, G₂₃, . . . , and theplurality of second electrodes F₁, F₂, . . . are respectively isolatedfrom adjacent ones by a plurality of second isolation grooves H₁₂, H₂₃,. . . sequentially arranged in the direction of arrangement of thesecond electrodes. The second isolation grooves H_(i)(i+1) (where i=1,2, . . . ) extend in opposing relation to a region of the firstelectrode E_(i+1) on the side the isolation groove G_(i)(i+1), andconsequently, the second electrode F_(i) is opposite to the region ofthe first electrode E_(i+1) on the side of the isolation grooveG_(i)(i+1). In the region of the non-single-crystal semiconductorlaminate member across which the second electrode F_(i) is opposite tothe first electrode E_(i+1), there is cut a contact groove O_(i)(i+1)which extends between the second electrode F_(i) and the first electrodeE_(i+1). The second electrode F_(i) extends, as the contact portionK_(i)(i+1), through the contact groove O_(i)(i+1) to reach the firstelectrode E_(i+1).

With such a photoelectric conversion device of the present invention,the contact portion K_(i)(i+1), which interconnects the second electrodeF_(i) of the semiconductor transducer U_(i) and the first electrodeE_(i+1) of the semiconductor transducer U_(i+1), is formed by anextention of the second electrode F_(i) which fills the contact grooveO_(i)(i+1) cut in the non-single-crystal semiconductor laminate memberbetween the second electrode F_(i) and the first electrode E_(i+1).Accordingly, the contact portion K_(i)(i+1) is simple-structured ascompared with the contact portion in the conventional photoelectricconversion device, and the area of the substrate occupied by the contactportion K_(i)(i+1) can be made far smaller than in the past. Therefore,the photoelectric conversion device of the present invention can beformed with a simple construction and with a high density, as comparedwith the prior art devices.

According to an aspect of the present invention, the contact grooveO_(i)(i+1) does not extend to the side wall of the non-single-crystalsemiconductor laminate member which is parallel to the direction ofarrangement of the semiconductor transducers U₁, U₂, . . . , so that thecontact portion K_(i)(i+1) does not extend to the abovesaid side wall ofthe non-single-crystal semiconductor laminate member, either.

With such a construction, it is possible to effectively eliminate thepossibility of the first electrode E_(i) and the second electrode F_(i)of the semiconductor transducer U_(i) being shorted by the materialforming the contact portion K_(i)(i+1) when the substrate assembly issevered along the direction of arrangement of the semiconductortransducers U₁, U₂ . . . into individual photoelectric conversiondevices. This permits easy fabrication of photoelectric conversiondevices of an intended high photoelectric conversion efficiency.

According to another aspect of the present invention, the side wall ofthe first electrode E_(i) and/or the second electrode F_(i) of thesemiconductor transducer U_(i), which extends along the direction ofarrangement of the semiconductor transducers U₁, U₂, . . . , lies insidethe side edge of the substrate.

With such an arrangement, it is possible to effectively prevent leakagecurrent from flowing between the first and second electrodes E_(i) andF_(i) of the semiconductor transducer U_(i) through the side wall of theregion Q_(i) of the non-single-crystal semiconductor laminate memberextending along the direction of arrangement of the semiconductortransducers U₁, U₂, . . . . Also it is possible to effectively avoidshorting of the first and second electrodes E_(i) and F_(i) by thematerial of either one or both of them when the substrate assembly issevered along the direction of arrangement of the semiconductortransducers U₁, U₂, into individual photoelectric conversion devices.This ensures that the photoelectric conversion device operates with anintended high photoelectric conversion efficiency without incurring anyloss which results from the abovesaid leakage current. Furthermore, aphotoelectric conversion device of the desired high photoelectricconversion efficiency can easily be produced.

The photoelectric conversion device manufacturing method of the presentinvention is intended for the manufacture of the photoelectricconversion device which is provided with the plurality ofseriesconnected semiconductor transducers U₁, U₂, . . . , as describedabove.

This manufacturing method includes the steps of (a') forming a firstconductive layer on a substrate having an insulating surface; (b')scribing the first conductive layer by a first laser beam to cut thereina plurality of sequentially arranged first isolation grooves G₁₂, G₂₃, .. . , by which a plurality of sequentially arranged first electrodes E₁,E₂, . . . are formed on the substrate; (c') forming a non-single-crystalsemiconductor laminate member on the substrate to cover the plurality offirst electrodes E₁, E₂, . . . and to fill the plurality of firstisolation grooves G₁₂, G₂₃, . . . ; (d') scribing the non-single-crystalsemiconductor laminate member by means of a second laser beam to form,contact grooves O₁₂, O₂₃, . . . thereby to expose therein the firstelectrodes E₁, E₂, . . . locally to the outside on the side of the firstisolation grooves G₁₂, G₂₃, . . . , respectively; (e') forming, on thesubstrate, a second conductive layer which covers the non-single-crystalsemiconductor laminate member and fills the contact grooves O₁₂, O₂₃, .. . to form contact portions K₁₂, K₂₃, . . . in contact with the firstelectrodes E₂, E₃, . . . , respectively; (f') scribing the secondconductive layer by means of a third laser beam to cut therein secondisolation grooves H₁₂, H₂₃, . . . , which correspond to the firstisolation grooves G₁₂, G₂₃, . . . , respectively, on the opposite sidetherefrom with respect to the contact grooves O₁₂, ₂₃, . . . , by whichare formed on the non-single-crystal semiconductor laminate membersecond electrodes F₁, F₂, . . . connected to the first electrodes E₂,E₃, . . . through the contact portions K₁₂, K₂₃, . . . , respectively.

According to an aspect of the manufacturing method of the presentinvention, in the step of forming the contact groove O_(i)(i+1) (wherei=1, 2, . . . ), it is formed so as not to extend to the side wall ofthe non-single-crystal semiconductor laminate member extending along thedirection of arrangement of the semiconductor transducers U₁, U₂, . . ..

According to another aspect of the manufacturing method of the presentinvention, in the step of scribing the first conductive layer using thefirst laser beam, there is cut in the first conductive layer at leastone third isolation groove which extends along the direction ofarrangement of the semiconductor transducers U₁, U₂, . . . and in whichis exposed at least one side of the first electrode E_(i) (where i=1, 2,. . . ) extending along the direction of arrangement of thesemiconductor transducers U₁, U₂, . . . , and/or in the step of scribingthe second conductive layer by the third laser beam, there is cut in thesecond conductive layer at least one fourth isolation groove whichextends along the direction of arrangement of the semiconductortransducers U₁, U₂, . . . and in which is exposed at least one side ofthe second electrode F_(i) extending along the direction of arrangementof the semiconductor transducers U₁, U₂, . . . .

Such a manufacturing method of the present invention as described abovepermits easy fabrication of the photoelectric conversion device whichhas the aforementioned arrangement and the aforesaid features.

Other objects, features and advantages of the present invention willbecome more fully apparent from the detailed description taken inconjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A, B, and C are respectively a plan view schematicallyillustrating an embodiment of the photoelectric conversion device of thepresent invention, a sectional view taken on the line B--B, and asectional view taken on the line C--C in FIG. 1A;

FIGS. 2, 3, 4, 5, 6, 7, and 8 are schematic diagrams showing a sequenceof steps involved in the manufacture of the photoelectric conversiondevice of FIG. 1 in accordance with an embodiment of the manufacturingmethod of the present invention, FIGS. 2A, 4A to 8A being plan views,FIGS. 2B, 3, and 4B to 8B cross-sectional views, and FIG. 8C alongitudinal view; and

FIGS. 9A, B, and C are respectively a plan view schematicallyillustrating another embodiment of the photoelectric conversion deviceof the present invention, a sectional view taken on the line B--B and asectional view taken on the line C--C in FIG. 9A.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring first to FIGS. 1A to C, a first embodiment of thephotoelectric conversion device of the present invention will bedescribed.

The photoelectric conversion device of the present invention shown inFIGS. 1A to C is provided with, for example, four semiconductortransducers U₁ to U₄ which are sequentially connected in series, and hassuch an arrangement as follows:

Substrate 1 has a surface 2 of an organic or inorganic insulator. Assuch a substrate 1, for example, a synthetic resin substrate can be usedwhich is transparent or nontransparent. It is also possible to employ aceramic substrate, a transparent glass substrate and a substrate, whichhas an insulating film of synthetic resin, a silicon oxide, or the like,deposited on a stainless steel or metal plate.

The substrate 1 is rectangular-shaped.

On a main surface 2 of the substrate 1 there are formed side by sidefour first electrodes E₁ to E₄.

Each of the electrodes E₁ to E₄ has a thickness of 1 μm or less.

The first electrode E_(i) (i=1, 2 . . . ) may be formed as a transparentconductive layer. In this case, the substrate 1 is transparent. Thefirst electrode E_(i) may be constituted principally of a sublimablemetallic oxide such as SnO₂, In₂ O₃, or ITO (Indium-Tin oxide), or asublimable metallic nonoxide material such as a Si--Cr or Si--Ni alloy.

The first electrode E_(i) may also be formed as a nontransparentconductive layer. In such a case, the substrate 1 need not betransparent. The nontransparent first electrode E_(i) may be constitutedprincipally of a sublimable metal such as Cr, a Cr--Cu alloy (containing0.1 to 50 Wt % of Cu), a Cr--Ag alloy (containing 0.1 to 50 wt % of Ag),a Cr--N alloy (containing 0.1 to 50 wt % of N), or a nonsublimable metalsuch as Al, Cu, or Ag.

Further, the first electrode E_(i) may also be a laminate member whichcomprises a transparent conductive layer constituted principally of theabovesaid sublimable metallic oxide or sublimable metallic nonoxide anda nontransparent conductive layer constituted principally of theabovesaid sublimable metal or nonsublimable metal. In this case, thenontransparent conductive layer is formed on the side of the substrate1, and the substrate 1 need not be transparent.

The electrode E_(i) is, for example, rectangular in shape and has awidth of 5 to 40 mm, preferably 15 mm, and a length slightly smallerthan the length of the substrate 1.

The electrodes E_(i) and E_(i+1) are spaced apart by a groove G_(i)(i+1)which is shown to extend in the vertical direction in FIG. 1A. Thegroove G_(i)(i+1) is, for example, 40 μm wide.

On the main surface 2 of the substrate 1 there is formed on the side ofelectrode E₄ which is opposite to the electrode E₃ another electrodeE_(e) which is similar to the first electrode E_(i) and is separatedfrom the electrode E₄ by an isolation groove G_(4e) similar to theabovesaid isolation groove G_(i)(i+1).

Further, the substrate 1 has opposite side walls 3 and 3' which extendalong the direction of arrangement of the semiconductor transducers U₁,U₂, . . . , and on the marginal portion of the main surface 2 of thesubstrate 1 near the side wall 3 thereof, there are formed electrodesC₁, C₂, . . . and C_(e) which are similar to the electrodes E₁, E₂, . .. and E_(e) but separated therefrom by an isolation groove 5 similar toG_(i)(i+1) and extending in the direction of semiconductor transducersU₁, U₂, . . . . Likewise, there are formed on the marginal portion ofthe main surface 2 of the substrate 1 the side wall 3' thereofelectrodes C₁ ', C₂ ', . . . and C_(e) ' which are similar to those E₁,E₂, . . . and E_(e) but separated therefrom by an isolation groove 5'similar to 5. The electrodes C_(i) and C_(i+) 1 are isolated by anextension of the isolation groove G_(i)(i+1) in the direction ofarrangement of the semiconductor transducers U₁, U₂, . . . , andsimilarly, the electrodes C_(i) ' and C_(i+1) ' are isolated by theisolation groove G_(i)(i+1). The electrodes C₄ and C_(e), and C₄ ' andC_(e) ' are isolated by the isolation groove G_(4e).

The isolation grooves 5 and 5' expose those side walls 6 and 6' of theelectrodes E_(i) and E_(e) which extend along the direction ofarrangement of the semiconductor transducers U₁, U₂, . . . , andconsequently, these side walls 6 and 6' are inside the side walls 3 and3' of the substrate 1, respectively.

A non-single-crystal semiconductor laminate member 11 is formed on themain surface 2 of the substrate 1 to cover the electrodes E₁, E₂, . . .E_(e), C₁, C₂, . . . C_(e) and C₁ ', C₂ ', . . . C_(e) ' and to fill theisolation grooves G₁₂, G₂₃, . . . G_(4e), 5 and 5'.

The non-single-crystal semiconductor laminate member 11 also has athickness of 1 μm or less.

The non-single-crystal semiconductor laminate member 11 has a PNjunction structure wherein a P-type non-single-crystal semiconductorlayer and N-type non-single-crystal semiconductor layer are laminatedone on the other in this order or in the reverse order, or a PINjunction structure wherein a P-, I- and N-type non-single-crystalsemiconductor layers are laminated one on another in this order or inthe reverse order.

The non-single-crystal semiconductor laminate member 11 may beconstituted mainly of a sublimable semiconductor such as Si, Si_(x)Ge_(1-x) (where 0<x<0.5), Si_(x) C_(1-x) (where 0<x<1), Si₃ N_(4-x)(where 0<x<2) or SiO_(2-x) (where 0<x<1), and the laminate member 11 hasintroduced therein hydrogen or a halogen as a dangling bond neutralizer.

On the non-single-crystal semiconductor laminate member 11 there areprovided electrodes F₁, F₂, . . . which are sequentially arranged inopposing relation to the electrodes E₁, E₂, . . . , respectively.

The electrode F_(i) also has a thickness of 1 μm or less.

The electrode F_(i) may be formed as a transparent conductive layerwhich is constituted principally of the sublimable metallic oxide orsublimable metallic nonoxide mentioned previously with regard to theelectrodes E₁ to E₄. In this case, the substrate 1 need not betransparent.

The electrode F_(i) may also be formed as a nontransparent conductivelayer which is constituted principally of the aforesaid sublimablemetal. In such a case, the substrate 1 is transparent.

Moreover, the electrode F_(i) may also be formed as a laminate memberwhich composed of a transparent conductive layer constituted mainly ofthe aforesaid sublimable metallic oxide or sublimable metallic nonoxideand a nontransparent conductive layer which is constituted mainly of theaforementioned sublimable or nonsublimable metal. In this case, thetransparent conductive layer is formed on the side of thenon-single-crystal semiconductor laminate member 11, and the substrate 1is transparent.

The electrodes F₁, F₂, . . . are separated from adjacent ones along thedirection of their arrangement by isolation grooves H₁₂, H₂₃, . . .which are similar to the aforementioned groove G_(i)(i+1). In this case,the isolation groove H_(i)(i+1) extends in opposing relation to theregion of the electrode E_(i+1) on the side of the isolation grooveG_(i+1). Accordingly, the electrode F_(i) is opposite to the region ofthe electrode E_(i+1) on the side of the isolation groove G_(i)(i+1),but the electrode F₄ is opposite to the electrode E_(e).

On the non-single-crystal semiconductor laminate member 11, there isprovided on the side opposite from the electrode F₂ with respect to theelectrode F₁ another electrode F_(e) which is similar to F_(i) and isseparated from the electrode F₁ by an isolation groove H_(e1) similar tothe abovesaid one H_(i)(i+1).

Furthermore, there are mounted on the marginal portion of thenon-single-crystal semiconductor laminate member 11 near the side wall 3of the substrate 1 electrodes D₁, D₂, . . . and D_(e) which are similarto the electrodes C₁, C₂, . . . and C_(e) but separated therefrom by anisolation groove 12 similar to the abovesaid groove 5. Likewise, thereare provided on the marginal portion of the non-single-crystalsemiconductor laminate member 11 on the side of the side wall 3' of thesubstrate 1 electrodes D₁ ', D₂ ', . . . and D_(e) ' which are similarto the electrodes C₁ ', C₂ ', . . . and C_(e) ' but separated therefromby an isolation groove 12' which extends in the same direction as doesthe abovesaid groove 12. The electrodes D_(i) and D_(i+1) are isolatedby an extension of the isolation groove H_(i)(i+1) in the direction ofarrangement of the semiconductor transducers U₁, U₂, . . . , andsimilarly, the electrodes D_(i) ' and D_(i1) ' are isolated by theisolation groove H_(i)(i+1). The electrodes D₁ and D_(e), and D₁ ' andD_(e) ' are isolated by the isolation groove H_(e1).

The isolation grooves 12 and 12' expose those side walls 13 and 13' ofthe electrodes F₁, F₂ . . . and F_(e) which extend along the directionof arrangement of the semiconductor transducers U₁, U₂, . . . , andconsequently, these side walls 13 and 13' are inside the side walls 3and 3' of the substrate 1, respectively.

In the region of the non-single-crystal semiconductor laminate member 11which is sandwiched between the electrodes F_(i) and E_(i+1), there isformed a contact groove O_(i)(i+1) which extends between them.Similarly, in the region of the non-single-crystal semiconductorlaminate member 11 which is sandwiched between the electrodes F_(e) andE₁, there is formed a contact groove O_(e1) which extends between them.The electrodes F_(i) and F_(e) extend, as contact portions K_(i)(i+1)and K_(e1), through the contact portions O_(i)(i+1) and O_(e1) forcontact with the electrodes E_(i+1) and E₁, respectively.

The electrodes E_(i) and F_(i) and the region Q_(i) of thenon-single-crystal semiconductor laminate member 11 across which theelectrodes E_(i) and F_(i) are opposite to each other constitute thesemiconductor transducer U_(i), which is connected in series to thesemiconductor transducer U_(i+1) through the contact portion K_(i)(i+1).

A protective film 14 is provided which covers the electrodes F₁, F₂, . .. F_(e), D₁, D₂, . . . D_(e) and D₁ ', D₂ ', . . . D_(e) ' and fills theisolation grooves H₁₂, H₂₃, . . . H_(e1). The protective film 14 may beformed of synthetic resin. When the substrate 1 is nontransparent, theprotective film 14 is transparent, but when the former is transparent,the latter need not be transparent.

With the photoelectric conversion device of such an arrangementaccording to the present invention, the contact portion K_(i)(i+1) issimple in construction and the area of the substrate occupied by thecontact portion can be decreased, as described previously.

As will become apparent from a description given later of an embodimentof the photoelectric conversion device manufacturing method of thepresent invention, since the contact portion K_(i)(i+1) is entirelysurrounded by the non-single-crystal semiconductor laminate member 11,it is possible to effectively eliminate the possibility of theelectrodes E_(i) and F_(i) of the semiconductor transducers U_(i) beingshorted by the material of the contact portion K_(i)(i+1) when thesubstrate assembly is severed along the direction of arrangement of thesemiconductor transducers U₁, U₂, . . . into individual photoelectricconversion devices.

Further, since the side walls 6, 6' and 13, 13' of the electrodes E_(i)and F_(i) of the semiconductor transducer U_(i) are exposed in theisolation grooves 5, 5' and 12, 12', respectively, and are inside of theside walls 3 and 3' of the substrate 1, no leakage current flows betweenthe electrodes E_(i) and F_(i) through the side walls of thenon-single-crystal semiconductor laminate member 11, and there is nofear of shorting of the electrodes E_(i) and F_(i) through the materialof either of them even in the case of severing the substrate assemblyinto individual photoelectric conversion devices.

Accordingly, the photoelectric conversion device of the presentinvention, shown in FIG. 1, is able to achieve an intended highphotoelectric conversion efficiency and can easily be manufactured witha high density.

Turning next to FIGS. 2 to 8, an embodiment of the manufacturing methodof the present invention will hereinafter be described as being appliedto the manufacture of the photoelectric conversion device describedabove in connection with FIG. 1.

In FIGS. 2 to 8, the parts corresponding to those in FIG. 1 areidentified by the same reference numerals, and no detailed descriptionwill be repeated.

The manufacture starts with the preparation of the substrate 1 havingthe insulating surface 2 (FIG. 2).

Then a conductive layer 21 of the same material and structure as theelectrode E_(i) is formed by a known evaporation or CVD method on thesurface 2 of the substrate 1 (FIG. 3).

Next, the conductive layer 21 is scribed by a laser beam to cutvertically therein a plurality of sets of isolation grooves G₁₂, G₂₃,G₃₄, and G_(4e) of a width substantially equal to the diameter of thelaser beam and which are sequentially arranged in the lateral direction(FIG. 4). At the same time, the conductive layer 21 is scribed to cuttherein laterally a plurality of pairs of isolation grooves 5 and 5' ofthe same width as the isolation groove G_(i)(i+1) which are sequentiallyarranged in the lengthwise direction. In other words, by patterning theconductive layer 21 with the laser beam, a plurality of sets ofelectrodes E₁ to E₄ and E_(e) are formed in a matrix form on thesubstrate I, and at the same time, pluralities of sets of electrodes C₁to C₄ and C_(e) and sets of electrodes C₁ ' to C₄ ' and C_(e) ' areformed in a matrix form.

In this case, the electrode E_(e) of one of two laterally adjoining setsof the electrodes E₁ to E₄ and E_(e) is connected to the electrode E₁ ofthe other set.

Further, the electrode C_(e) of one of two laterally adjoining sets ofelectrodes C₁ to C₄ and C_(e) is connected to the electrode C₁ of theother set, and in a similar fashion, the electrode C_(e) ' of one of twoadjacent sets of electrodes C₁ ' to C₄ ' and Ce' is connected to theelectrode C₁ ' of the other set.

Furthermore, two sets of electrodes C₁ to C₄ and C_(e) and C₁ ' to C₄ 'and Ce', which are adjacent to each other in the vertical direction,bear such a relation that the electrodes C₁ to C₄ and C_(e) of theformer set are connected to the electrodes C₁ ' to C₄ ' and C_(e) ' ofthe latter set, respectively.

The laser beam used in this case may be a pulsed laser beam that has ashort wavelength of 600 nm or less, a spot diameter of 3 to 60 μm andduration of 50 nano-seconds or less.

As the pulsed laser beam, a pulsed laser beam of a 530 nm or sowavelength can be used which is obtainable with a YAG laser. It is alsopossible to employ a pulsed laser beam of 193 nm or so (ArF), 248 nm orso (KrF), 308 nm or so (XeCl) or 315 nm or so (XeF) wavelength which isobtainable with an excimer laser, a laser beam of a 514.5 nm or so, 488nm or so, 458 nm or so, 363 nm or so or 351 nm or so, wavelength whichis obtainable with an argon laser, or a laser beam of a 337 nm or sowavelength which is obtainable with a nitrogen laser.

Also it is possible to use a pulsed laser beam of such a long wavelengthas about 1060 nm which is obtainable with a YAG laser.

When the laser beam has a short wavelength of 600 nm or less, theabsorption coefficient of the electrode E_(i) for the laser beam is morethan 100 times larger than the absorption coefficient for a laser beamhaving a long wavelength of about 1060 nm which is obtainable with a YAGlaser. Accordingly, the conductive layer 21 is effectively heated by thelaser beam locally at the position of its irradiation. On the otherhand, since the conductive layer 21 is as thin as 1 μm or less, it doesnot unnecessarily transfer therethrough heat resulting from theirradiation by the laser beam, namely, the heat generated in theconductive layer 21 does not unnecessarily escape therefrom to outsidethrough the conductive layer 21 itself. Moreover, the substrate 1 has aninsulating surface, and hence it also prevents heat generated in theconductive layer 21 from unnecessarily escaping therefrom to the outsidethrough the substrate 1. Accordingly, the material of the conductivelayer 21 is effectively sublimed at the position of irradiation by thelaser beam. As a result of this, electrodes E_(i) are neatly formed,along with the grooves. In this case, there is no possibility that thematerial of the conductive layer 21, molten by the laser beamirradiation, is deposited on the marginal edges of the electrode E_(i).Further, since the laser beam is effectively absorbed by the conductivelayer 21 because of its short wavelength, it does not inflict on thesubstrate 1 unnecessary damages such as depressions and cracks. Theeffects described just above are prominent especially when theconductive layer 21 is a transparent conductive layer which isconstituted principally of the aforementioned sublimable metallic oxideor sublimable metallic nonoxide, a nontransparent conductive layer whichis constituted principally of the aforesaid sublimable metal, or alaminate member composed of such transparent and nontransparentconductive layers. Incidentally, even if the conductive layer 21 is anontransparent conductive layer which is constituted principally of theaforementioned nonsublimable metal, or a laminate member comprised ofthe abovesaid transparent conductive layer and the nontransparentconductive layer which is constituted mainly of the aforementionednonsublimable metal, the substrate 1 is not damaged because it has aninsulative surface

Next, a non-single-crystal semiconductor laminate member 11 is formed,by a known CVD, low-pressure CVD, plasma or glow discharge CVD method,on the substrate 1 so that it covers the electrodes E₁ to E₄ and E_(e),C₁ to C₄ and C_(e), and C₁ ' to C₄ ' and C_(e) ' and extends into thegrooves G₁₂, G₂₃, G₃₄, and G_(4e), 5 and 5' (FIG. 5).

The non-single-crystal semiconductor layer 11 also has a thickness of 1μm or less.

Next, the non-single-crystal semiconductor laminate member 11 isirradiated by a laser beam to cut therein in a matrix form a pluralityof sets of contact grooves O_(e1), O₁₂, O₂₃, and O₃₄ of a widthsubstantially equal to the diameter of the laser beam (FIG. 6).

In this case, the grooves O_(e1), O₁₂, O₂₃ and O₃₄ are formed to exposeelectrodes E₁, E₂, E₃, and E₄. The formation of contact grooves O_(e1)and O_(i)(i+1) in the non-single-crystal semiconductor layer 11 iseffected through use of the same laser beam as that for the formation ofthe electrodes E_(i), E_(e), C_(i), C_(e), C_(i) ' and C_(e) '.Therefore, no detailed description will be repeated.

When the laser beam used has such a short wavelength as 600 nm or less,the absorption coefficient of the non-single-crystal semiconductorlaminate member 11 for the laser beam is also large as is the case withthe aforementioned conductive layer 21. Therefore, thenon-single-crystal semiconductor laminate member 11 is effectivelyheated at the position of irradiation by the laser beam as in the caseof the aforementioned conductive layer 21. Further, since thenon-single-crystal semiconductor laminate member 11 is as thin as 1 μmor less, it does not transfer laterally therethrough the heat generatedtherein, thereby preventing the heat from unnecessarily escaping fromthe laminate member 11 to the outside, as described previously.Moreover, the non-single-crystal semiconductor laminate member 11 isconstituted principally of the sublimable semiconductor, as referred topreviously. This enables the contact grooves O_(i)(i+1) and O_(e1) to beformed neatly, and ensures prevention of the material ofnon-single-crystal semiconductor layer 11, molten by the laser beamirradiation, from being deposited on marginal edges of the contactgrooves O_(i)(i+1) and O_(e1), and that the electrodes E_(i) and E_(e)are hollowed, by the laser beam, to form therein a deep depression whichmay sometimes reach the substrate 1. Next, a conductive layer 41 isformed on the substrate 1 to cover the non-single-crystal semiconductorlaminate member 11. The conductive layer 41 has contact portions K.sub.e1, K₁₂, K₂₃, and K₃₄ which extend through the contact grooves O_(e1),O₁₂, O₂₃, and O₃₄ and down to the electrodes E₁, E₂, E₃, and E₄ of thecorresponding sets, respectively. The conductive layer 41 is of the samematerial and construction as the electrode F_(i).

Next, the conductive layer 41 is scribed by a laser beam to cutvertically therein a plurality of sets of isolation grooves H₁₂, H₂₃,H₃₄ and H_(4e) of a width substantially equal to the diameter of thelaser beam and which are sequentially arranged in the widthwisedirection (FIG. 8). At the same time, the conductive layer 41 is scribedto cut therein laterally a plurality of pairs of isolation grooves 12and 12' of the same width as the isolation grooves H_(i)(i+1) and H_(4e)which are sequentially arranged in the lengthwise direction. In otherwords, by patterning the conductive layer 41 with the laser beam, aplurality of sets of electrodes F₁ to F₄ and F_(e) are formed in amatrix form on the substrate 1, and at the same time, pluralities ofsets of electrodes D₁ to D₄ and D_(e) and sets of electrodes D₁ ' to D₄' and D_(e) ' are formed in a matrix form.

In this case, electrode F_(e) of one of two laterally adjoining sets ofthe electrodes F₁ to F₄ and F_(e) is connected to the electrode E_(e) ofthe other set.

Further, the electrode D₄ of one of two laterally adjoining sets ofelectrodes D₁ to D₄ and D_(e) is connected to the electrode D_(e) of theother set, and in a similar fashion, the electrode D_(e) ' of one of twoadjacent sets of electrodes D₁ ' to D₄ ' and D_(e) ' is connected to theelectrode C_(e) ' of the other set.

Furthermore, two sets of electrodes D₁ to D₄ and D_(e) and D₁ ' to D₄ 'and D_(e) ', which are adjacent to each other in the vertical direction,bear such a relation that the electrodes D₁ to D₄ and D_(e) of theformer set are connected to the electrodes D₁ ' to D₄ ' and D_(e) ' ofthe latter set, respectively.

The laser beam used for the patterning of the conductive layer 41 intothe electrodes F_(i) and F_(e), D_(i) and D_(e), and D_(i) ' and D_(e) 'is the same as that for the formation of the E_(i) and E_(e), C_(i) andC_(e), and C_(i) ' and C_(e) '. Therefore, no detailed description willbe repeated.

The absorption coefficient of the conductive layer 41 for such a laserbeam of a 600 nm or less wavelength is large, as described previously inconnection with the conductive layers 21 and the non-single-crystalsemiconductor layers 11. On the other hand, the conductive layer 41 isthin and its portion on the side of the non-single-crystal semiconductorlayer 11 is constituted mainly of the sublimable metallic oxide,sublimable metallic nonoxide, or sublimable metal, so that theelectrodes F_(i) and F_(e), D_(i) and D_(e), and D_(i) ' and D_(e) ' areneatly formed, along with the grooves H_(e1) and H_(i)(i+1). That is tosay, there is no possibility that the underlying non-single-crystalsemiconductor layers 11 are hollowed, by the laser beam, to form thereindeep depressions which may at a future time reach the underlyingelectrodes E_(i), and that the electrodes F_(i) and F_(e), D_(i) andD_(e), and D_(i) ' and D_(e) ' are exfoliated at their marginal edges.Next, the protective film 14 which covers the electrodes F_(i) and Fe,D_(i) and D_(e), and D_(i) ' and D_(e) ' and extends into the groovesH_(i) and H_(e), is formed by a known method.

Next, the substrate assembly is cut as by a laser beam along laterallyand vertically extending cutting lines X₁, X₂, . . . and Y₁, Y₂ . . .into a plurality of such photoelectric conversion devices as describedpreviously with respect to FIG. 1.

The cutting lines Y₁, Y₂, . . . each pass through a position where theelectrode E_(e) of one set of electrodes E₁ to E₄ and E_(e) and theelectrode E₁ of another set of electrodes E₁ to E₄ and E_(e) adjacentthereto in the lateral direction are interconnected and a position wherethe electrode F₄ of one set of electrodes F₁ to F₄ and the electrodeF_(e) of another set of electrodes F₁ to F₄ adjacent thereto in thelengthwise direction are interconnected. The cutting lines X₁, X₂, . . .each pass through a position where the electrodes C₁ to C₄ and C_(e) ofone electrode set consisting thereof and the electrodes C₁ ' to C₄ ' andC_(e) ' of another electrode set consisting thereof and adjacent to theabove electrode set in the widthwise direction are interconnected and aposition where the electrodes D₁ to D₄ and D_(e) of one electrode setconsisting thereof and the electrodes D₁ ' to D₄ ' and D_(e) ' ofanother electrode set consisting thereof and adjacent the abovesaidelectrode set in the widthwise direction are interconnected.

In this case, by cutting the substrate assembly along the cutting linesY₁, Y₂, . . . into individual devices, outer side walls are definedalong the vertical cutting lines in connection with only the electrodesE₁ and E₄ of the electrodes E₁ to E₄ and F₁ to F₄ which are disposed atthe opposite ends of each device, but no such side walls are formed withregard to the other electrodes E₂ to E₄ and F₁ to F₃. Also, by cuttingalong the cutting lines X₁, X₂, . . . , no such side walls are formedalong the lengthwise cutting lines with respect to the electrodes E₁ toE₄ and F₁ to F₄. This eliminates the possibility of shorting of theelectrodes E_(i) and F_(i) by the materials thereof, even if theabovesaid cutting is effected by a laser beam. Further, by cutting alongthe cutting lines X₁, X₂, . . . , the non-single-crystal semiconductorlaminate member 11 is cut, but neither of the contact portions K_(e1)and K_(i)(i+1) are cut. On account of this, even if the abovesaidcutting is effected by a laser beam, there is no possibility that thematerial of the contact portion K_(i)(i+1) enters into that region ofthe non-single-crystal semiconductor laminate member defined between theelectrodes E_(i) and E_(i+1) on the side of the latter, resulting inshorting of the electrodes E_(i) and F_(i) through the abovesaidmaterial and the contact portion K_(i)(i+1).

While the foregoing description has been given of only one embodiment ofeach of the photoelectirc conversion device and its manufacturing methodaccording to the present invention, it is also possible to dispense withthe isolation grooves 12, 12', 5 and 5' and the electrodes C₁ to C_(e),C₁ ' to C₄ ' and C_(e) ', as shown in FIG. 9 which corresponds to FIG.1.

Although the foregoing description has been given of the case where thecontact groove O_(i)(i+1) is circular and single, it is also possible toprovide the contact groove O_(i)(i+1) in a square, rectangular, orelliptic form, and two or more such grooves may also be provided.Furthermore, the contact groove O_(i)(i+1) may also be formed to extendbetween the side walls 3 and 3' of the substrate 1, as viewed fromabove. Also it is possible that the isolation groove H_(i)(i+1) beformed to extend into the non-single-crystal semiconductor laminatemember 11 and, in some cases, to the electrode E_(i). Moreover, thecontact groove O_(i)(i+1) may also be formed to extend into theelectrode E_(i+1) and, in some cases, to the substrate 1.

It will be apparent that many modifications and variations may beeffected without departing from the scope of the novel concepts of thepresent invention.

What is claimed is:
 1. A photoelectric conversion device comprising:asubstrate having an insulating surface; a first electrode arrangementcomprising a first conductive layer formed on said substrate; aphotoelectric conversion semiconductor layer formed on said firstelectrode arrangement; a second electrode arrangement comprising asecond conductive layer formed on said semiconductor layer; at least onehole formed through said photoelectric conversion semiconductor layer,through which said first electrode arrangement is electrically connectedto said second electrode arrangement, said hole extending into saidfirst conductive layer; and a protective layer formed over said secondelectrode arrangement.
 2. The device of claim 1 wherein saidsemiconductor layer has a semiconductor junction formed between at leasttwo semiconductor layers having different conductivity types.
 3. Thedevice of claim 1 wherein said semiconductor layer has a PIN junctiontherein.
 4. The device of claim 1 wherein said substrate isnon-transparent and said protective layer is transparent.
 5. The deviceof claim 1 wherein said substrate comprises synthetic resin.
 6. Thedevice of claim 1 wherein said protective layer comprises syntheticresin.
 7. The device of claim 1 wherein said substrate is transparent.8. The device of claim 1 wherein said hole is located on an interiorsurface of said semiconductor layer.
 9. The photoelectric conversiondevice of claim 1 wherein at least one of said first and secondelectrode arrangement comprises a multilayer film.
 10. The photoelectricconversion device of claim 9 wherein said multi-layer film comprises atransparent conductive film and a nontransparent conductive film. 11.The photoelectric conversion device of claim 10 wherein said transparentconductive film comprises a material selected from the group consistingof SnO₂, In₂ O₃, Si--Cr alloy, and Si--Ni alloy.
 12. The photoelectricconversion device of claim 10 wherein said non-transparent conductivefilm comprises a material selected from the group consisting of Cr,Cr--Cu alloy, Cr--Ag alloy, Cr--N alloy, Al, Cu, and Ag.
 13. Thephotoelectric conversion device of claim 1, wherein said substratecomprises a synthetic resin.
 14. A photoelectric conversion devicecomprising a plurality of series connected photoelectric conversioncells U₁, U₂ . . . U_(n), where n>2, said device comprising:a substrate;a plurality of first electrodes E₁, E₂, . . . E_(n) formed on saidsubstrate; a photoelectric conversion semiconductor layer covering saidfirst electrodes; a plurality of second electrodes F₁, F₂ . . . F_(n)formed on said semiconductor layer in opposing relation with said firstelectrodes, respectively; a plurality of connecting means K₁₂, K₂₃ . . .K.sub.(n-1)n for connecting the second electrodes F₁, F₂, . . . F_(n-1)with the first electrodes E₂ . . . E_(n), respectively; and a protectivelayer formed on said second electrodes, wherein said connecting meanspenetrates through said semiconductor layer and extends into said firstelectrodes, respectively through holes formed through said photoelectricconversion semiconductor layer, through which said first electrodearrangement is electrically connected said second electrode arrangement,said holes extending into said first electrodes.
 15. The photoelectricconversion device of claim 14 wherein at least one of the first andsecond electrodes is transparent.
 16. The photoelectric conversiondevice of claim 14 wherein said photoelectric conversion semiconductorlayer comprises a non-single crystalline semiconductor.
 17. Thephotoelectric conversion device of claim 14 wherein at least one of saidfirst and second electrodes comprises a multi-layer film.
 18. Thephotoelectric conversion device of claim 17 wherein said multi-layerfilm comprises a transparent conductive film and a nontransparentconductive film.
 19. The photoelectric conversion device of claim 18wherein said transparent conductive film comprises a material selectedfrom the group consisting of SnO₂, In₂ O₃, Si--Cr alloy, and Si--Nialloy.
 20. The photoelectric conversion device of claim 18 wherein saidnon-transparent conductive film comprises a material selected from thegroup consisting of Cr, Cr--Cu alloy, Cr--Ag alloy, Cr--N alloy, At, Cu,and Ag.
 21. The photoelectric conversion device of claim 14, whereinsaid substrate comprises a synthetic resin.
 22. A photoelectricconversion device comprising a plurality of series connectedphotoelectric conversion cells, each cell comprising:a substrate; afirst conductive layer formed on said substrate; a photoelectricconversion semiconductor layer formed on said first conductive layer; asecond conductive layer formed on said photoelectric conversionsemiconductor layer; at least one connecting means for connecting thefirst conductive layer with the second conductive layer of an adjacentcell; and a protective layer covering at least said second conductivelayer, wherein said connecting means penetrates through saidsemiconductor layer and extends into and inside of said first electrodethrough a hole formed through said photoelectric conversionsemiconductor layer, through which said first conductive layer iselectrically connected to said second conductive layer, said holeextending into said first conductive layer.
 23. The photoelectricconversion device of claim 22, wherein said substrate comprises asynthetic resin.
 24. A photoelectric conversion device having aplurality of series connected photoelectric conversion cells,comprising:a substrate; a plurality of first electrodes; a photoelectricconversion semiconductor layer covering said first electrodes; aplurality of second electrodes formed on said semiconductor layer inopposing relation to said first electrodes in order to define saidphotoelectric conversion cells therebetween; and a protective layerformed over said second electrodes, wherein said photoelectricconversion cells are connected in series through a plurality ofconnecting means, each said connecting means connecting the firstelectrode in one of said cells with the second electrode in another oneof said cells adjacent thereto through said semiconductor layer; whereinan end of said connecting means extends into said first electrodes,through holes formed through said photoelectric conversion semiconductorlayer, through which said first electrodes are electrically connected tosaid second electrodes, said holes extending into said first electrodes.25. The photoelectric conversion device of claim 24, wherein saidsubstrate comprises a synthetic resin.